Responsibilities may include, but are not limited to
Lead the process development, execution, and optimization of volume die-to-wafer (D2W) bonding and post-bond device processing of non-Si material chiplets, integrated in silicon photonics.
Owning part or all the non-Si material chiplet integration process module in the cleanroom; including the processes of dicing, grinding, die-to-wafer bonding, and waveguide etching.
Drive the scaling of the heterogeneous integration processes from initial R&D and prototyping phases up to high volume manufacturing.
Provide necessary expertise to bridge the internal fab operations, advanced process development, and Kilby R&D design teams to align HI processes with device performance requirements and fab capabilities.
Work with tool vendors and IP partners to reduce process development time leveraging external IP.
Work closely with photonic design, architecture, and packaging teams to translate design, layout, and product requirements into cost and yield optimized manufacturing solutions.
Establish robust process controls, root-cause failure analysis, and yield enhancement strategies to drive cost and power improvements, ensure high manufacturing yield and long-term device reliability.
Develop process characterization and troubleshooting procedures, including development of process monitors, test structures, critical to quality parameter specifications, metrology and inspection procedures, and correlations with device performance data.
Develop and maintain process reporting and documentation, including process flow descriptions, quality specifications, goal plotting, and yield reports.
Research and develop differentiating process techniques beyond the state of the art.
Minimum Requirements
Master’s/Ph.D. degree in Electrical Engineering, Physics, Applied Physics, or Material Science.
3+ years of industry experience with one or more of the following processing steps for integration of non-Si high-speed modulator materials onto silicon photonics in a high volume silicon photonics fab environment: planarization and pre-bond surface preparation, die-to-wafer bonding, wafer-to-wafer bonding, post-bond waveguide etching and processing, and metallization.
Experience with material physics and process-related effects on device performance for materials such as Lithium Niobate, Lithium Tantalate, Barium Titanate, or Indium Phosphide.
Track record of delivering high yield process modules for high speed silicon photonics fab processes involving heterogeneous integration of non-materials in high volume manufacturing.
Strong expertise in statistical process control (SPC), design of experiments (DOE), and utilizing advanced material characterization techniques applied to Cpk optimization for silicon photonics with HI of non-SI materials.
Ability to work independently and lead cross-functional collaboration between process, fab, and design teams.
Preferred Qualifications
Understanding of the mechanisms of direct bonding methods (i.e. fusion bonding) and surface chemistry of bonding
Hands-on cleanroom experience with dicer, grinder and bonder (die-to-wafer or wafer-to-wafer).
Knowledge of high-speed photonic modulator device physics, device design, and important device performance metrics
Understanding of characterization and testing of high-speed modulators and silicon photonic devices
Experience with volume manufacturing of high speed integrated photonic devices for state-of-the-art data communications products.
Experience using process monitor and test data analysis tools and statistical analysis tools such as JMP or statistical libraries (e.g. Matlab, Python).
Strong verbal and written communication skills.
Ideal candidates must also excel at promoting new ideas, building collaborative relationships, working across organizations.
