We are seeking a highly motivated Analog Design Engineer with 5–8 years of experience in non-volatile memory (NVM) design, including EEPROM, Flash, or emerging memories such as ReRAM. The candidate will contribute to the design and development of high-performance, reliable memory IPs for advanced applications, including automotive and industrial systems.
Design and develop analog and mixed-signal circuits for NVM IPs (EEPROM, Flash, ReRAM)
Architect and implement key building blocks such as
Charge pumps, voltage regulators, bandgaps, oscillators
Sense amplifiers, reference circuits, and biasing schemes
Collaborate with digital, layout, and validation teams to deliver silicon-proven designs
Perform circuit simulations (DC, AC, transient, Monte Carlo, corner analysis) to ensure robustness across PVT conditions
Drive design reviews, failure analysis, and silicon debug activities
Support test vehicle development and participate in characterization and qualification
Ensure compliance with reliability and automotive standards (e.g., AEC-Q100 where applicable)
Contribute to design methodology improvements and documentation
Bachelor’s or Master’s degree in Electrical Engineering or related field
5–8 years of experience in analog/mixed-signal IC design
Strong experience in NVM technologies such as EEPROM, Flash, or ReRAM
Solid understanding of
Device physics and reliability (e.g., breakdown, aging, retention)
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High-voltage analog design techniques
Proficiency in industry-standard tools (e.g., Cadence Virtuoso, Spectre, APS)
Experience with layout collaboration and parasitic-aware design
Strong debugging and problem-solving skills
